| PART |
Description |
Maker |
| NTMFS4H02N |
N??hannel Power MOSFET, 25 V
|
ON Semiconductor
|
| NTMFS4H01NF |
N??hannel Power MOSFET, 25 V
|
ON Semiconductor
|
| MPF4392 MPF4393 ON2307 |
(MPF4392) JFETs Switching
From old datasheet system
N-hannel Depletion
|
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
|
| VN0300L_D ON3009 VN0300L |
TMOS FET Transistor
From old datasheet system
N-hannel Enhancement
|
Motorola, Inc
ON Semi
|
| LBSS138LT1 LBSS138LT1G |
Power MOSFET 200 mAmps, 50 Volts N-hannel SOT-3
|
乐山无线电股份有限公
|
| MFE211 MFE212 |
N-. HANNEL DUAL-GATE SILICON-NITRIDE PASSIVATED MOS FIELD-EFFECT TRANSISTORS
|
New Jersey Semi-Conductor Products, Inc.
|
| MRF21060L MRF21060 MRF21060LR3 MRF21060LSR3 |
RF Power Field Effect Transistors
2110??170 MHz, 60 W, 28 V Lateral N??hannel RF Power MOSFETs
|
Freescale Semiconductor, Inc
MOTOROLA
|
| MMG05N60D_D ON2233 MMG05N60D |
Insulated Gate Bipolar Transistor
From old datasheet system
N-hannel Enhancement-ode Silicon Gate
|
ONSEMI[ON Semiconductor]
|
| MMFT2955E MMFT2955E_D ON2219 ON2218 MMFT2955ET1 |
1200 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
From old datasheet system
N-hannel Enhancement-ode Logic Level SOT23
TMOS MEDIUM POWER FET 1.2 AMP 60 VOLTS
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semi
|
| MMFT3055E_D ON2223 MMFT3055E-D |
Medium Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount
From old datasheet system
N-hannel Enhancement-ode Logic Level SOT23
|
ON Semiconductor
|
| MPF930 MPF960 MPF990 ON2308 |
(MPF930 / MPF960 / MPF990) TMOS Switching
(MPF960/MPF990) TMOS Switching
N-hannel Enhancement
From old datasheet system
|
ON Semi
MOTOROLA[Motorola, Inc]
|
